Weebit Nano (ASX: WBT), the Israel-based semiconductor company seeking to develop and commercialise the next generation of memory technology, and its development partner Leti, the French research institute recognised as a global leader in the field of micro-electronics, have filed two new patents for Weebit’s Silicon Oxide (SiOx) ReRAM technology.
The new patents relate to methods for optimising the performance of ReRAM memory cells by adjusting the manufacturability based on electrical measurements. One patent outlines a general methodology used to achieve the highest electrical performance of ReRAM cells while the other is the specification of that methodology. Identifying the unique SiOx device specification and manufacturing method enhances the commercial viability of Weebit’s technology, and therefore reduces manufacturing costs and allows for more flexible manufacturing capability.
Coby Hanoch, CEO of Weebit Nano, said: “As we move closer to productisation, we are constantly looking for ways to optimise our SiOx ReRAM technology. Our close collaboration with Leti has enabled us to make significant progress and technological breakthroughs, such as the ones covered by these two patents. The precise specification of the optimisation process allows us to push the boundaries of ReRAM technology even further and places us at the forefront of the ReRAM industry.”
“While we continue to work on optimising parameters of Weebit’s ReRAM technology and responding to feedback from potential customers, the latest advancement significantly enhances our manufacturing process and capability ahead of the move to a production fab.”
