Next-generation memory tech developer Weebit Nano (ASX:WBT) has publicly demonstrated its ReRAM IP module for the first time at leading industry event, Leti Innovation Days. In an update to the ASX, the company said the interactive demonstration was a key technical milestone, highlighting its technology’s real-world capability as a non-volatile memory (NVM) integrated into an actual subsystem.
The demonstration showed Weebit ReRAM functioning as an NVM memory block, being fed live images and retaining this data while powered-off, then displaying the data separately. The demonstration also showed the speed of Weebit’s ReRAM module, clearly highlighting its faster write speed compared to typical flash memory technology. The Direct Program/Erase capability and byte addressability of Weebit ReRAM contribute to its faster write throughput time compared to flash, which needs to access entire data sectors every time it erases/writes.
Coby Hanoch, CEO of Weebit Nano, said: “This is the first time we are publicly demonstrating our ReRAM embedded in silicon, less than a year after taping out the module. The demo of our ReRAM technology represents yet another key technical milestone as we progress toward full productisation. The demo will be a great asset for use in our sales activities with potential customers.”
The demo is based on Weebit’s embedded ReRAM module and includes the ReRAM array, control logic, decoders, Input/Output communication elements, and error correcting code as well as patent-pending analog and digital smart circuitry running smart algorithms, which significantly enhance the memory array’s technical parameters.