ASX-listed semiconductor company Weebit Nano (WBT) has confirmed its Silicon Oxide (SiOx) ReRAM technical parameters are at the forefront of the market.
The key parameters for non-volatile memory are retention and endurance. Tests on Weebit’s latest batch of wafers were conducted by Leti, the French research institute recognised as a global leader in the field of micro-electronics, and showed significant improvement on previous results, demonstrating retention of over 10 years at 130-150oC – at the forefront of ReRAM technologies. These results at very high temperatures broaden the range of potential commercial applications for Weebit’s ReRAM technology, most notably automotive applications.
In addition, the latest batch showed single cells demonstrating endurance of a million cycles, significantly exceeding state-of-the-art flash performance.
Coby Hanoch, CEO of Weebit Nano, said: “Improving technical parameters is an ongoing task. As announced previously, we demonstrated market competitive retention, endurance and voltage levels early this year. We are now very proud to have improved the endurance and the retention at high temperatures, placing us at the forefront of the ReRAM market. These capabilities in our ReRAM chips also open new potential markets such as automotive. This is a significant step forward for the company.
“We will continue to optimise parameters, responding to feedback from potential customers as part of our ongoing dialogue with them. This will be done in parallel to the work on productisation, as these two tasks go hand-in-hand.”
The latest results build on recent process optimisation milestones where Weebit announced it had reached market level retention in October 2018, and market level endurance and voltages in January 2019.
Weebit will continue to optimise its technology as it moves towards production on 300mm wafers.
